symbol v ds v gs i dm t j , t stg symbol typ max 38 50 69 80 r q jl 24 30 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w w t a =70c 1.6 junction and storage temperature range -55 to 150 c power dissipation t a =25c p d 2.5 a t a =70c 4 pulsed drain current b 20 continuous drain current a t a =25c i d 5 drain-source voltage 60 v gate-source voltage 20 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units AO4440 v ds (v) = 60v i d = 5a (v gs = 10v) r ds(on) < 55m w (v gs = 10v) r ds(on) < 75m w (v gs = 4.5v) the AO4440 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in p wm applications. g d s 60v n-channel mosfet general description features www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 20 a 42 55 t j =125c 75 54 75 m w g fs 11 s v sd 0.78 1 v i s 4 a c iss 450 540 pf c oss 60 pf c rss 25 pf r g 1.65 2 w q g (10v) 8.5 10.5 nc q g (4.5v) 4.3 5.5 nc q gs 1.6 nc q gd 2.2 nc t d(on) 5.1 7 ns t r 2.6 4 ns t d(off) 15.9 20 ns t f 2 3 ns t rr 25.1 35 ns q rr 28.7 nc maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =5a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =5a, di/dt=100a/ m s input capacitance n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =48v, v gs =0v m a gate-body leakage current v ds =0v, v gs = 20v gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =10v, v ds =5v r ds(on) static drain-source on-resistance forward transconductance m w v gs =4.5v, i d =4a v ds =5v, i d =5a i s =1a,v gs =0v v gs =10v, i d =5a diode forward voltage v gs =10v, v ds =30v, r l =6 w , r gen =3 w gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =30v, i d =5a v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any a given application depends on the use r's specific board design. the current rating is ba sed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2: nov. 2010 AO4440 60v n-channel mosfet www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics: n-c hannel 0 5 10 15 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4.0v 10.0v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 60 70 80 90 100 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =4a i d =5a 40 60 80 100 120 140 160 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 25c 125c AO4440 60v n-channel mosfet www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics: n-c hannel 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10 20 30 40 50 60 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =30v i d = 5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s AO4440 60v n-channel mosfet www.freescale.net.cn 4 / 4
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